Analysis and modelling of the role of temperature in the static forward characteristics of an IGBT

Layachi Boussouar*,Hervé Morel, Bruno Allard and Cyril Buttay

Int. J. Power Electronics, 10 (2019), pp 3

Investigation of barrier inhomogeneities in Mo/4H–SiC Schottky diodes

L. Boussouar a, Z. Ouennoughi a,⇑, N. Rouag a, A. Sellai b, R. Weiss c, H. Ryssel c

Contents lists available at ScienceDirect Microelectronic Engineering journal homepage: www.elsevier.com/locate/mee, 88 (2011), pp 969–975

Gaussian distribution of inhomogeneous barrier height in tungsten/4H-SiC (000-1) Schottky diodes

S. Toumi a, A. Ferhat-Hamida a, L. Boussouar a, A. Sellai b, Z. Ouennoughi a,*, H. Ryssel c

Contents lists available at ScienceDirect Microelectronic Engineering journal homepage: www.elsevier.com/locate/mee, 86 (2009), pp 303–309

On the difference in the apparent barrier height of inhomogeneous Schottky diodes with a Gaussian distribution

N Rouag1, L Boussouar2, S Toumi2, Z Ouennoughi2 and M A Djouadi1

IOP PUBLISHING, 22 (2007), pp 369–373